科研之友
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摘要
We present a fast and reliable fully integrated crosspoint three-state cell resistive random access memory. We accomplish swift back-and-forth hopping among the three resistance states by current-limiting set and in situ bit line regulating reset writing. The self-stuffing word line driver alleviates resistance variations in medium and low resistance states by 2.3 times and 3 times, respectively. The proprietary analog-to-digital converter type transimpedance sense amplifier achieves fast and reliable multilevel read. We integrated a 16-kbit cross-point array and periphery circuits using 350-nm CMOS technology.
- 出版日期2017-5
