Ab initio calculation of Co2MnSi/semiconductor (SC, = GaAs, Ge) heterostructures

作者：Chen, Li-Yong; Wang, Su-Fang; Zhang, Yan; Zhang, Jian-Min^*; Xu, Ke-Wei

来源：Thin Solid Films, 2011, 519(13): 4400-4408.

DOI：10.1016/j.tsf.2011.03.005

• Heterostructure
• Interface
• Spin polarization
• Half-metallic
• Anti-site defect

Within density function theory under the generalized gradient approximation, for ideal Co2MnSi/GaAs (001) and (110) multilayer structures, the CoSi-AsGa interfaces are found to be half-metallic. While the most stable (110) CoSi-GeGe interface, for the ideal Co2MnSi/Ge multilayer systems, is near half-metallic. Given the atomic disorder in the Co2MnSi/GaAs (001) ((110)) multilayer systems with the CoSi-AsGa interface, Co anti-site defect is more readily presented at the (001) ((110)) interface. These results show that the low tunneling magnetoresistance ratio or spin injection measured in Co2MnSi/GaAs (001) (or (110)) tunnel junction in some experiments may be relevant to the interfaced Co anti-site defect as well as interfacial structure.

• 出版日期2011-4-29
• 单位西安交通大学; 陕西师范大学