New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

作者：Kociniewski T^*; Moussodji J; Khatir Z; Berkani M; Lefebvre S; Azzopardi S

来源：IEEE Electron Device Letters, 2012, 33(4): 576-578.

DOI：10.1109/LED.2011.2182492

• Cross section
• electrical characterization
• failure analysis
• IGBT
• power devices
• power diode
• thermal characterization
• thermal mapping

For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.

• 出版日期2012-4