科研之友
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摘要
Use of a high-pressure process is proposed for synthesizing highly doped semiconductors. Working on a real example in a recent experiment by Ekimov on B-doped diamond synthesis, a theoretical investigation has been made of an efficient doping method. The underlying principle is simple: stiffer materials are energetically favorable over softer ones under high pressure. Softer impurities are easily dissolved in stiff crystals. In Ekimov's method, the energy required for a B atom to transfer from boron carbide to diamond comes from the energy gain by converting graphite to diamond, in addition to the entropy effect of dissolving the B atom in diamond.
- 出版日期2009-3
