High-Resolution ac Measurements of the Hall Effect in Organic Field-Effect Transistors

作者：Chen, Y.; Yi, H. T.; Podzorov, V.^*

来源：Physical Review Applied, 2016, 5(3): 034008.

DOI：10.1103/PhysRevApplied.5.034008

• CHARGE-TRANSPORT
• CRYSTAL
• SEMICONDUCTORS

We describe a high resolving power technique for Hall-effect measurements, efficient in determining Hall mobility and carrier density in organic field-effect transistors and other low-mobility systems. We utilize a small low-frequency ac magnetic field (B-rms < 0.25 T) and a phase-sensitive (lock-in) detection of Hall voltage, with the necessary corrections for Faraday induction. This method significantly enhances the signal-to-noise ratio and eliminates the necessity of using high magnetic fields in Hall-effect studies. With the help of this method, we are able to obtain the Hall mobility and carrier density in organic transistors with a mobility as low as mu similar to 0.3 cm(2) V-1 s(-1) by using a compact desktop apparatus and low magnetic fields. We find a good agreement between Hall-effect and electric-field-effect measurements, indicating that, contrary to the common belief, certain organic semiconductors with mobilities below 1 cm(2) V-1 s(-1) can still exhibit a fully developed, band-semiconductor-like Hall effect, with the Hall mobility and carrier density matching those obtained in longitudinal transistor measurements. This suggests that, even when mu < 1 cm(2) V-1 s(-1), charges in organic semiconductors can still behave as delocalized coherent carriers. This technique paves the way to ubiquitous Hall-effect studies in a wide range of low-mobility materials and devices, where it is typically very difficult to resolve the Hall effect even in very high dc magnetic fields.

• 出版日期2016-3-17
• 单位南方科技大学