A comb-gate silicon tunneling field effect transistor with improved on-state current

作者：Zhan Zhan; Huang QianQian; Huang Ru^*; Jiang WenZhe; Wang YangYuan

来源：Science China Information Sciences, 2013, 56(7): 072401.

DOI：10.1007/s11432-012-4713-5

• tunneling
• transistor
• on-state current
• comb-gate

In this paper, a new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated. Source implantation masked by the comb-shaped gate can result in comb-shaped channel region. With this comb-shaped gate configuration, increased tunneling area can be obtained and hence higher on-state current without area penalty. Moreover, an optimized CG-TFET with silicide source is fabricated to further improve the on-state current by introducing Schottky barrier tunneling current which is much more efficient than band-to-band tunneling. In addition, the electron barrier in the comb-shaped channel region is raised due to the self depleted effect, which can effectively suppress the Schottky injection leakage from the silicide source in the off-state. 1.5 orders of magnitude higher than conventional TFET with the same footprint on-state current and more than 10(6) on-off current ratio can be achieved.

• 出版日期2013-7
• 单位北京大学