Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages

作者：Cheng Xiang; Lee Sungsik; Nathan Arokia

来源：IEEE Journal of the Electron Devices Society, 2018, 6(1): 195-200.

DOI：10.1109/JEDS.2018.2789579

• TFT
• analog circuits
• subthreshold operation
• low power

The intrinsic gain (A(i)), transconductance efficiency (g(m)/I-DS) and cut-off frequency (f(T)) are analysed for thin film transistors (TFTs) operating in the deep subthreshold region to assess the impact of device variations on the design window for analogue circuits. Results suggest that subthreshold operation could improve the A(i) and g(m)/I-DS at the cost of reduced f(T) and increased sensitivity to bias and process variations. Interestingly, a less steep subthreshold slope (SS) could, to some extent, compensate for these shortcomings, which is in contrast to the general thinking of pursuing a steeper SS in TFT fabrication.

• 出版日期2018-12