Microstructure and electrical properties of Na0.5Bi0.5(Ti0.98Zr0.02)O-3 thin film deposited on indium tin oxide/glass substrate

作者：Yang C H^*; Sui H T; Geng F J; Feng C; Qian J

来源：Materials Research Bulletin, 2015, 65: 23-26.

DOI：10.1016/j.materresbull.2015.01.006

• Thin films
• Microstructure
• Ferroelectricity
• Dielectric properties

Na0.5Bi0.5(Ti0.98Zr0.02)O-3 (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O-2 atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P-E) loop can be observed with a remanent polarization (P-r) of 11.5 mu C/cm(2) and small gap. At 14V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.

• 出版日期2015-5
• 单位济南大学