n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

作者：Guziewicz M^*; Schifano R; Przezdziecka E; Domagala J Z; Jung W; Krajewski T A; Guziewicz E

来源：Applied Physics Letters, 2015, 107(10): 101105.

DOI：10.1063/1.4930307

Epitaxial n-type ZnO film has been grown, on a commercial 5 mu m thick p-type 4H-SiC(00.1) Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 diffraction peak rocking curve of 0.34 degrees +/- 60.02 degrees has been measured. Diodes formed on the n-ZnO/p-4H-SiC heterostructure show rectifying behavior with a forward to reverse current ratio at the level of 10(9) at +/-4V, a leakage current density of similar to 6 x 10(-8) A/cm(2), and a low ideality factor equal to 1.17+/-0.04. In addition, the diodes exhibit selective photoresponse with a maximum at 367 nm, and with a current increase of similar to 10(3) under illuminations with respect to the dark value, which makes such devices prospective candidates for ultraviolet light sensors.

• 出版日期2015-9-7