Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

作者：Chung Ho Young; Woo Kie Young; Kim Su Jin; Kim Kyeong Heon; Kim Hee Dong; Kim Tae Geun^*

来源：Superlattices and Microstructures, 2013, 64: 1-6.

DOI：10.1016/j.spmi.2013.09.014

• Efficiency droop
• Light-emitting diodes
• Numerical simulation
• Internal quantum efficiency
• Quantum well and barrier

In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.

• 出版日期2013-12