Ultrafast Solid-State Transformation Pathway from New-Phased Goethite VOOH to Paramontroseite VO(2) to Rutile VO(2)(R)

作者:Wu Changzheng; Feng Feng; Feng Jun; Dai Jun; Yang Jinlong; Xie Yi*
来源:Journal of Physical Chemistry C, 2011, 115(3): 791-799.
DOI:10.1021/jp109967j

摘要

Monoclinic vanadium dioxides VO(2)(M) is prototype material for interpreting correlation effects in solids, and its fully reversible metal-insulator transition (MIT) also brings the great interest in construction of intelligent devices such as temperature sensors and energy-efficient smart windows. The solid-state transformation started from vanadium precursors has been long-term regarded as the classic effective route to rutile VO(2)(R), while the conventional vanadium precursors usually requires indispensable atomic lattice rearrangement and reshuffling to realize rutile VO(2)(R) phase, leading to strict experimental conditions, high cost, and long conversion time (even more than one day) during the VO(2)(R) formation process. Herein, under the theoretical guidance of atomically structural analysis, a new structure-conversion pathway from goethite VOOH to paramontroseite VO(2) to rutile VO(2)(R) realized an alternative ultrafast transformation into desired monoclinic VO(2)(M), of which. each two steps only requires within 60 s. Thanks to the discovered new-phased goethite VOOH, the well-crystalline synthetic paramontroseite VO(2) was realized from the chemically synthetic way, and in effect the paramontroseite structure plays the decisive role in achieving the desired monoclinic VO(2)(M) from the structural viewpoint, which would further promote this expensive material into the realm of conventional laboratory synthesis. The realized monoclinic VO(2)(M) exhibits the smart switching properties in regulating thermal, magnetic, and near IR light behaviors, and more importantly the metal-insulator transition (MIT) parameters such as the MIT temperature and the width of heating-cooling hysteresis are now precisely controlled. These intriguing findings may pave new way for designing other functional solid materials with correlation effects and then providing the material guarantee for constructing the intelligent devices in future.