An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier

作者：Wang, Ying^*; Wang, Wen-Ju; Yu, Cheng-Hao; Huang, Fei; Sun, You-Lei; Tang, Jian-Xiang

来源：IEEE Journal of the Electron Devices Society, 2018, 6(1): 1154-1158.

DOI：10.1109/JEDS.2018.2871066

• TMBS
• breakdown voltage (BV)
• specific ON-resistance
• figure of merit (FoM)

This paper proposes an optimal 4H-silicon carbide trench MOS barrier Schottky (TMBS) Rectifier. The optimal structure of this rectifier is achieved by adding an N- wrapping region at the P+ shielding of the conventional TMBS structure, which significantly reduces the depletion region formed by the P+ shielding region. As a result, the proposed structure provides a lower ON-resistance comparing with the conventional P+ shielding structure. Moreover, we study the electric characteristics of the proposed structure via numerical simulation. Such a structure improves the specific ON-resistance and figure of merit of the conventional P+ shielding TMBS by 32.2% and 48.4%, respectively, and offers a high breakdown voltage, i.e., up to 1908 V.

• 出版日期2018
• 单位杭州电子科技大学