A 750-W AlGaN/GaN HEMT Operating at 80 V for L-Band Applications

作者：Zhang, Li-Jiang; Mo, Jiang-Hui; Cui, Yu-Xing; Fu, Xing-Chang; Qian, Guang; Li, Xian-Jie; Zhang, Tong^*

来源：IEEE Microwave and Wireless Components Letters, 2018, 28(5): 440-442.

DOI：10.1109/LMWC.2018.2813878

• AlGaN/GaN
• high-electron mobility transistor (HEMT)
• L-band

High operating voltage and high power are important developing goals of GaN-based high-electron mobility transistor (HEMT) at present. In this letter, we demonstrated a GaN-based HEMT exhibiting a breakdown voltage of greater than 300 V, an operating voltage of up to 80 V, an output power of up to 750 W, a power-added efficiency (PAE) of 80% and an associated power gain of 16.8 dB at 1.3 GHz. The device simultaneously realizes high voltage, high power, and high PAE, and is suitable for L-band high-power applications.

• 出版日期2018-5
• 单位东南大学