Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation

作者：Chowdhury Animesh R; Ness Richard; Joshi Ravi P^*

来源：IEEE Transactions on Electron Devices, 2018, 65(9): 3922-3929.

DOI：10.1109/TED.2018.2856803

• Lock-on
• modeling
• persistent photoconductivity
• photoconductive switch
• pulsed power application
• semi-insulating semiconductors

The time-dependent photocurrent response in semi-insulating GaAs and InP was studied based on 1-D, time-dependent simulations with a focus on the Lock-On phenomenon. The results underscore the role of trap-to-band impact ionization from deep traps in rapid charge creation and its subsequent propagation much like a streamer. The numerical results compare well with the actual data. The main findings are that deeper traps nearer the valence band at higher densities, materials with larger high-field drift velocity, and cathode-side illumination would all aid in attaining Lock-On. These could be useful guidelines for producing Lock-On in new materials such as GaN for high-power applications.

• 出版日期2018-9