Microstructural evolution of nickel-germanide in the Ni1-xTax/Ge systems during in situ annealing

作者：Lee Jae Wook; Bae Jee Hwan; Park Min Ho; Kang Han Byul; Kim Hyoungsub; Yang Cheol Woong^*

来源：Journal of Vacuum Science and Technology A, 2008, 26(4): 688-691.

DOI：10.1116/1.28397631

The formation and morphological evolution of the germanides formed in the Ni1-xTax/Ge (x=0 and 0.1) systems were examined using ex situ and in situ annealing experiments. It was observed that the Ni-germanide in the Ni0.9Ta0.1/Ge system remained stable at temperatures up to 550 degrees C whereas the Ni-germanide in the Ni/Ge system agglomerated and was unstable. Microstructural and chemical analyses of the Ni0.9Ta0.1/Ge system during and after in situ annealing in a transmission electron microscope confirmed that the Ta-rich layer was formed by the accumulation of Ta atoms on the interface between the Ni0.9Ta0.1 alloy film and the Ge substrate during the diffusion reaction, and a small amount of residual Ta was found in the Ni-germanide grains. Ultimately, the Ta-rich layer helps reduce the level of agglomeration in the Ni-germanide film and improves the thermal stability of Ni-germanide.

• 出版日期2008-8