High-Current Tunneling FETs With (1(1)over-bar0) Orientation and a Channel Heterojunction

作者：Long Pengyu^*; Huang Jun Z; Povolotskyi Michael; Klimeck Gerhard; Rodwell Mark J W

来源：IEEE Electron Device Letters, 2016, 37(3): 345-348.

DOI：10.1109/LED.2016.2523269

• Tunnel FETs
• crystal orientation
• band structure engineering
• resonant tunneling

We propose InAs/GaSb ultrathin-body tunneling field-effect transistors (TFETs) using confinement in the (1 ($) over bar0) plane and transport in the [110] direction to increase the tunneling probability by reducing the tunnel barrier energy and hole effective mass. To reduce the OFF-state leakage current, we add an InAs/In1-nAlnAs1-nSbn heterojunction to the channel, which increases the valence band barrier. The heterojunction also increases the tunneling probability and ON-current by reducing the tunneling distance through the p-n junction and introducing a resonant state. A fully atomistic non-equilibrium Green function quantum transport approach in NEMO5 is used to explore the design space. While choosing 10(-3) A/m OFF-current (I-OFF) and a 0.3 V power supply, we simulate 270 A/m ON-current (I-ON) for a 30-nm gate length and 170 A/m for a 15-nm gate length (L-g), while a conventional 15-nm L-g GaSb/InAs TFET under (001) confinement shows only 24 A/m I-ON.

• 出版日期2016-3