Feasibility of InxGa1-xAs High Mobility Channel for 3-D NAND Memory

作者：Capogreco E; Subirats A; Lisoni J G; Arreghini A; Kunert B; Guo W; Tan C L; Delhougne R; Van den Bosch G; De Meyer K; Furnemont A; Van Houdt J

来源：IEEE Transactions on Electron Devices, 2017, 64(1): 130-136.

DOI：10.1109/TED.2016.2633388

• 3-D NAND memory
• InxGa1-xAs channel
• poly-Si
• retention
• surface preparation
• transconductance (g(m))
• tunnel oxide (TuOx)

Epitaxial InxGa1-xAs is grown by metal organic vapor phase epitaxy as replacement of polycrystalline silicon (Si) channel for high-density 3-D NAND memory applications. The most challenging steps to integrate InxGa(1-x)As are thoroughly discussed; their impact on the electrical performances are investigated and the tunnel oxide (TuOx) quality is assessed. InxGa1-xAs channels with a diameter down to similar to 45 nm and different In concentrations are obtained after using two alternative surface preparation routes: HCl and Cl-2. Thanks to the lower thermal budget involved, Cl-2 seems the most suitable route to preserve the thickness of the TuOx. InxGa1-xAs channels with In concentration, x, higher than 0.45 have superior conduction properties compared with poly-Si channel, showing higher I-ON and transconductance.

• 出版日期2017-1