AlN codoping and fabrication of ZnO homojunction by RF sputtering

作者：Balakrishnan L; Premchander P; Balasubramanian T; Gopalakrishnan N^*

来源：Vacuum, 2011, 85(9): 881-886.

DOI：10.1016/j.vacuum.2011.01.003

• ZnO
• Codoping
• Sputtering
• Homojunction
• Characterization

The ZnO homojunction fabricated from undoped and 1 mol% AlN doped (codoped) ZnO targets by RF magnetron sputtering has been reported. The grown films on Si (100) substrate have been characterized by X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and Hall measurements. The increase of d-space value (compared with unstressed bulk) found from XRD for AlN codoped ZnO film supports the formation of p-ZnO due to the N incorporation. The presence of N in the film has been confirmed by EDS and XPS analysis. Further, the p-conductivity in AlN codoped ZnO has been evidenced by low temperature PL (donor-acceptor-pair emission) and room temperature PL (red shift in near-band-edge emission). Hall measurement shows that 1 mol% AlN codoped ZnO has the hole concentration of 3.772 x 10(19) cm(-3). The fabricated homojunction with 1% AlN doped ZnO (p-type) and undoped ZnO (n-type) exhibits a typical rectification behavior with high breakdown voltage, and rectification ratio, 13.4. The junction parameters such as ideality factor, barrier height and series resistance have also been calculated for the fabricated p-n junction. The energy band diagram has been proposed for the fabricated homojunction.

• 出版日期2011-2-25