科研之友
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摘要
In this work, radiation hardening of a infrared photo-voltaic detector which is the core component of thermal image system was studied. The device with ZnS surface passivation shows the degradation of RoA value by 1/100 after 10kGy gamma radiation. It is believed that the accumulated charge in the ZnS increases the surface leakage current and degrades the RoA value. To improve the irradiation characteristics, thermally evaporated CdTe was developed. The characteristics of CdTe passivated device was tested with various test patterns. It was found that the device with CdTe passivation shows radiation immunity for 10kGy gamma radiation.
- 出版日期2008-6
