摘要

An equivalent circuit model of Si chip integrated spiral inductors is delivered, which uses the method of partial element equivalent circuit and a closed-form three-dimensional multilayered Green's function from complex fitting the exponential function in spectral domain. In this case, the loss of the Si substrate is considered to construct the equivalent circuit of the inductor. The method is both accurate and efficient for modeling of the Si integrated spiral inductors, and the computing example is also given.