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摘要
The present work explores the growing behavior of the intermetallic layer in the Mg-Si system. Following achievements have been obtained in our investigation: (i) A complete wetting concept is proposed for the lateral spreading of the intermetallic layer. (ii) In contrast to the stoichiometric property for the intermetallic phase in the phase diagram, the authors show that concentration gradients are able to be established in the kinetic process. (iii) Contrary to the reported growth behavior, d proportional to t(0.25-0.5) in other intermetallics, the authors find a transition from d proportional to root t to d proportional to t with an increase of the temperature, where d is the thickness of the intermetallic layer and t is the time.
- 出版日期2017-10
