Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

作者：Liu Chunli^*; Chae S C; Lee J S; Chang S H; Lee S B; Kim D W; Jung C U; Seo S; Ahn S E; Kahng B; Noh T W

来源：Journal of Physics D: Applied Physics , 2009, 42(1): 015506.

DOI：10.1088/0022-3727/42/1/015506

We report a detailed study on the abnormal resistance switching behaviours observed in NiO thin films which show unipolar resistance switching phenomena. During the RESET process, in which the NiO film changed from a low resistance state to a high resistance state, we sometimes observed that the resistance became smaller than the initial value. We simulated the resistance switching by using a random circuit breaker network model. We found that local conducting channels could be formed as well as ruptured during the RESET process, which result in the occurrence of such abnormal switching behaviours.

• 出版日期2009-1-7