X-ray Absorption Fine Structure Analysis of Valence State of Ce in Polycrystalline Ce:LuAG Films

作者：Xie, Jianjun^*; Zhu, Xiaoxing; Fan, Lingcong; Shi, Ying; Ma, Qing; Xu, Jian; Lei, Fang

来源：IEEE Transactions on Nuclear Science, 2014, 61(1): 428-432.

DOI：10.1109/TNS.2013.2289388

• Ce:LuAG film
• H-2 annealing
• photoluminescence
• XANES

Ce3+ doped lutetium aluminum garnet (Ce:Lu(3)Al5(5)O(12)/Ce:LuAG) Polycrystalline scintillation films have been fabricated on silicon (111) substrates by Pechini sol-gel method combined with spin-coating technique. Photoluminescence (PL) spectra and X-ray absorption fine structure (XAFS) analysis were used to characterize the as-prepared films. X-ray absorption near-edge structure (XANES) spectra of the Ce-L-3 edge demonstrated that the Ce ion in Ce:LuAG films synthesized in air exhibited two charge states, +3 and +4 valence respectively. By post annealing in H atmosphere, the relative content of Ce3+ ions increased from 46.3% to 80.5% for 1.0 mol% Ce:LuAG films, which corresponded with the enhancement of luminescence intensity of this samples.

• 出版日期2014-2
• 单位上海大学