A self-formed nanonetwork meshed Pt layer on an epitaxial GaN surface

作者：Liu C Y^*; Chang C C; Chen Y J; Chen P H

来源：Scripta Materialia, 2011, 64(6): 533-536.

DOI：10.1016/j.scriptamat.2010.11.036

• Self-organization and patterning
• Wetting
• Metallizations
• Optical reflectivity

A self-formed nanonetwork meshed Pt layer formed on the epitaxial (0 0 0 1) GaN substrate upon thermal annealing. Electron backscatter diffraction analysis shows that, while the meshed Pt layer was forming on the GaN surface, Pt atoms rearranged themselves in a (1 1 1)-preferred orientation on (0 0 0 1) GaN. The (1 1 1) Pt/(0 0 0 1) GaN interface represents the most energy-favored stacking configuration. This unique meshed Pt layer demonstrates a relatively high transmittance in visible range, which can be used as a high-reflectivity/low-resistance p-GaN contact for high-power LEDs.

• 出版日期2011-3
• 单位中央民族大学