Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model

作者：Najam Faraz^*; Tan Michael Loong Peng; Ismail Razali; Yu Yun Seop

来源：Semiconductor Science and Technology, 2015, 30(7): 075010.

DOI：10.1088/0268-1242/30/7/075010

• MoS2
• MOSFET
• transconductance
• interface traps
• subthreshold slope
• surface potential

A surface potential-based low-field drain current compact model is presented for two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor field-effect transistors that takes into account the effect of interface trap states on device current-voltage (I-ds-V-gs) characteristics and transconductance gm. The presence of interface trap states detrimentally affects device I-ds-V-gs performance. Minimal work exists on the extraction of trap states (cm(-2) eV(-1)) of MoS2/high-K dielectric/metal-gate stacks. Additionally, there is a lack of compact models for 2D TMD MOSFETs that can take into account the effect of trap states on device I-ds-V-gs performance. This study presents a method to extract the interface trap distribution of MoS2 MOSFETs using a compact model. Presented as part of the model is a surface potential/interface trap charge self-consistent calculation procedure and a drain current expression that does not need numerical integration. The model is tested against reported experimental I-ds-V-gs data, and excellent agreement is found between the experiment and the model.

• 出版日期2015-7