A Seven-Octave Broadband LNA MMIC Using Bandwidth Extension Techniques and Improved Active Load

作者：Hu, Jianquan; Ma, Kaixue^*; Mou, Shouxian; Meng, Fanyi

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2018, 65(10): 3150-3161.

DOI：10.1109/TCSI.2018.2803299

• Broadband amplifier
• octave bandwidth
• bandwidth extension technique
• low-noise amplifier (LNA)
• active load
• monolithic microwave integrated circuit (MMIC)
• GaAs pseudomorphic high electron-mobility transistor (pHEMT)

This paper presents the analysis and design of a novel broadband low-noise amplifier (LNA) with larger than seven-octave bandwidth. To achieve good impedance matching, flat gain, and low noise over larger than seven-octave bandwidth, the combination technique of shunt-resistive feedback, dual inductive-peaking techniques as well as a compact improved active load supporting broadband RF biasing from dc to 20 GHz, is proposed for LNA design. The gain and noise improvement principles of the proposed technique are also analyzed theoretically. Based on the theoretical study, a three-stage LNA with larger than seven-octave bandwidth, i.e. 0.1 to 20 GHz, is designed and verified using a 0.15-mu m GaAs pHEMT technology. The LNA experimental results show a high gain of 28.6 dB, good noise figure of 3.1 to 5.8 dB, and output P-1 dB of 7.8 to 12.7 dBm over the broad frequency range of 0.1 to 20 GHz. The proposed LNA has a compact chip size of only 1.53 mm(2) including testing input/output pads.

• 出版日期2018-10
• 单位电子科技大学