A new antifuse cell with programmable contact for advance CMOS logic circuits

作者：Chen Maybe^*; Huang Chia En; Tseng Yuan Heng; King Ya Chin; Lin Chrong Jung

来源：IEEE Electron Device Letters, 2008, 29(5): 522-524.

DOI：10.1109/LED.2008.920754

• antifuse
• dielectric breakdown
• gate oxide
• non-volatile memories (NVMs)
• one-time programmable (OTP)
• oxide breakdown
• resist-protection oxide (RPO)

A new CMOS-process-compatible programmable contact antifuse (PCAF) cell is presented in this letter for advance programmable logic applications. This innovative PCAF cell adapts an oxide layer formed by the etched resist-protection oxide layer under a properly designed contact region, which results in a highly scalable one-time-programmable solution for advance logic circuits. A subcircuit model describing the I-V characteristics of the antifuse cell before and after program is developed to facilitate the future PCAF memory macro design.

• 出版日期2008-5
• 单位清华大学; 中国科学院电工研究所