Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

作者：Kayser Y^*; Banas D; Cao W; Dousse J Cl; Hoszowska J; Jagodzinski P; Kavcic M; Kubala Kukus A; Nowak S; Pajek M; Szlachetko J

来源：Spectrochimica Acta Part B: Atomic Spectroscopy , 2010, 65(6): 445-449.

DOI：10.1016/j.sab.2010.02.013

• Grazing emission X-ray fluorescence (GEXRF)
• Depth profiling
• Synchrotron radiation
• High-resolution X-ray spectroscopy
• Ion implantation

The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10(16) atoms/cm(2) in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-K alpha X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.

• 出版日期2010-6