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摘要
The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics (MD) simulations. This work focuses on the effects of the implantation energy, dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation. Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature. By introducing a new parameter of defect rate, the influence of the processing parameters on defect rate is also quantitatively examined.
