Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode

作者:Qiao Da Yong*; Yuan Wei Zheng; Gao Peng; Yao Xian Wang; Zang Bo; Zhang Lin; Guo Hui; Zhang Hong Jian
来源:Chinese Physics Letters, 2008, 25(10): 3798-3800.
DOI:10.1088/0256-307x/25/10/076

摘要

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm(2), an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm(2) are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.