Direct In Situ Nitridation of Nanostructured Metal Oxide Deposited Semiconductor Interfaces: Tuning the Response of Reversibly Interacting Sensor Sites

作者：Laminack William I; Gole James L^*

来源：ChemPhysChem, 2014, 15(12): 2473-2484.

DOI：10.1002/cphc.201402108

• interfaces
• metal oxides
• nitridation
• sensors
• silicon

Metal-oxide nanostructure-decorated extrinsic semiconductor interfaces modified through in situ nitridation greatly expand the range of sensor interface response. Select metal-oxide sites, deposited to an n-type nanopore-coated microporous interface, direct a dominant electron-transduction process for reversible chemical sensing, which minimizes chemical-bond formation. The oxides are modified to decrease their Lewis acidity through a weak interaction to form metal oxynitride sites. Conductometric and X-ray photoelectron spectroscopy measure-ments demonstrate that in situ treatment changes the reversible interaction with the analytes NH3 and NO. The sensor range is extended, which creates a distinct new family of responses determined by the Lewis acidity/basicity of a given analyte relative to that of the nanostructures chosen to decorate the interface. The analyte response, broadened in a substantial and predictable way by nitridation, is explained by the recently developing inverse hard/soft acid/base model (IHSAB) of reversible electron transduction.

• 出版日期2014-8-25