Design and fabrication of GaAs-based RTD based on coherent resonant tunneling theory

作者：Wu Yi Bin; Yang Rui Xia^*; Yang Ke Wu; Shang Yao Hui; Bu Xia Zheng; Niu Chen Liang; Zhao Hui; Wang Jian Feng

来源：Journal of Optoelectronics - Laser, 2011, 22(2): 189-192.

• Design data
• Epilayer structures
• GaAs
• Material structure
• Material systems
• Measurement results
• Peak current density
• Peak-to-valley current ratio
• Resonant tunneling transmission coefficient Full width at half-maximum (FWHM)
• Tunneling transmission

Resonant tunneling transmission coefficient Full width at half-maximum (FWHM) curves of GaAs/AlAs/In0.1Ga0.9As material system were computed and used for the design of resonant tunneling diode (RTD). Several RTD epilayer structures were presented based on the computed results and these structures were grown by molecular beam epitaxy (MBE) method. The characteristics of the structures were examined by X-ray diffraction. It is shown that the layer thichnesses of the structures are exactly identical to the design data, and the interfaces are also very flat. RTD devices were fabricated with the grown material structures, and the I-V features were characterized. The measurement results demonstrate that the peak-to-valley current ratio reaches 8.25 with peak current density of 112 kA/cm2.

• 出版日期2011
• 单位河北工业大学