Luminescence properties of Si-capped beta-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates

作者：Amari Shogo; Nakamura Yoshiaki^*; Ichikawa Masakazu

来源：Journal of Applied Physics, 2014, 115(8): 084306.

DOI：10.1063/1.4867037

We studied the luminescence properties of Si-capped beta-FeSi2 nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO2 films induced the self-assembly of epitaxial beta-FeSi2 NDs. The PL spectra of the Si/beta-FeSi2 NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the beta-FeSi2 NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed beta-FeSi2 NDs.

• 出版日期2014-2-28