Anomalous capacitance in temperature and frequency characteristics of a TiW/p-InP Schottky barrier diode

作者：Wang, Qingsong; Chen, Jun^*; Tang, Hengjing; Li, Xue

来源：Semiconductor Science and Technology, 2016, 31(6): 065023.

DOI：10.1088/0268-1242/31/6/065023

• TiW alloy
• InP
• anomalous peaks
• negative capacitances

The capacitance-voltage (C-V) and conductance voltage (G/omega-V) characteristics of a TiW/p-InP Schottky barrier diode (SBD) are measured at 310 K in the frequency range from 10 kHz to 1 MHz and the temperature dependency of the diode from 310 K to 400 K at 1 MHz are also investigated. Anomalous peaks and negative capacitances caused by interface states (N-ss) and series resistance (R-s) are discussed, which strongly influence the electrical characteristics of SBD. R-s is calculated from the measured capacitance (C-m) and conductance (G(m)) values, indicating that the effects of R-s are apparent at low frequency. The corrected capacitance (C-c) and corrected conductance (G(c)) are both obtained from the Cm and Gm values by taking into account R-s.

• 出版日期2016-6
• 单位中国科学院上海技术物理研究所; 苏州大学