Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

作者：Liu Siyang; Zhang Chunwei; Sun Weifeng^*; Su Wei; Wang Shaorong; Ma Shulang; Huang Yu

来源：Applied Physics Letters, 2014, 104(15): 153512.

DOI：10.1063/1.4872057

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

• 出版日期2014-4-14
• 单位东南大学