科研之友
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摘要
Multivalley spin relaxation in n-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin-relaxation time first increases and then decreases with electric field, especially when the temperature is relatively low. We show that L valleys play the role of a "drain" of the total spin polarization due to the large spin-orbit coupling in L valleys and the strong Gamma-L intervalley scattering, and thus can enhance spin relaxation of the total system effectively when the in-plane electric field is high. Under electric field, spin precession resulting from the electric-field-induced magnetic field is observed. Meanwhile, due to the strong Gamma-L intervalley scattering as well as the strong inhomogeneous broadening in L valleys, electron spins in L valleys possess almost the same damping rate and precession frequency as those in Gamma valley. This feature still holds when a finite static magnetic field is applied in Voigt configuration, despite that the g factor of L valleys is much larger than that of Gamma valley. Moreover, it is shown that the property of spin precession of the whole system is dominated by electrons in Gamma valley. Temperature, magnetic field, and impurity can affect spin relaxation in low electric-field regime. However, they are shown to have marginal influence in high electric-field regime.
- 出版日期2008-6
- 单位中国科学技术大学
