摘要
Post-annealing is an efficient method to improve passivation quality of the amorphous/crystalline silicon configuration and it's been widely used in fabrication of amorphous/crystalline silicon heterojunction solar cells. In this study, hydrogenated amorphous silicon thin films are deposited on n type monocrystalline silicon, using a single chamber radio-frequency plasma-enhanced chemical vapor deposition system. After passivation the best result with effective minority carrier lifetime (tau(eff)) exceeding 1600 mu s is achieved. Fourier transform infrared spectrum is utilized to investigate the structure evolution after annealing. The result shows that, the improved passivation quality is attributed to interface dangling bonds saturated by H atoms diffusion during annealing, the reason of passivation quality affected by annealing and film thickness is also proposed.