Annealing effect on the optical and electronic properties of beta-Ga2O3/AZO multilayered films

作者：Mi, Wei^*; Zhang, Kailiang; Zhao, Jinshi; Yang, Zhengchun

来源：Journal of Materials Science: Materials in Electronics , 2016, 27(11): 11390-11395.

DOI：10.1007/s10854-016-5264-0

• DEPOSITION TECHNIQUE
• THIN-FILMS
• GROWTH

Beta-gallium oxide/Aluminum-doped zinc oxide (beta-Ga2O3/AZO) multilayered films consisting of three bilayers of 100-nm beta-Ga2O3 and 400-nm AZO have been successfully prepared on sapphire substrates by magnetron sputtering. The microstructure of the beta-Ga2O3/AZO film is investigated in detail using X-ray diffractometer, scanning electron microscope, Energy Dispersive Spectrometer, Hall measurement system and UV-Vis-NIR spectrophotometer. It is found that the optical and electronic properties of the films are manipulated by the annealing temperature. The films annealed at 800 A degrees C exhibit the best properties with the out-of-plane orientation of ZnO (001)||Al2O3 (0001). The Hall mobility of this film is 14.47 cm(2) V-1 s(-1) and the average transmittance is about 94 %. The optical band gap is 3.25 eV. These results indicate that the beta-Ga2O3/AZO multilayered films are appealing candidate for photoelectric device applications.

• 出版日期2016-11
• 单位天津理工大学