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摘要
AlN films were deposited on Si (1 1 1) substrates by middle-frequency magnetron sputtering with and without anode-layer ion source assistance, and stoichiometric films were obtained. The structure and composition of the films were characterized by x-ray diffraction, atomic force microscopy and scanning electron microscopy. The films deposited under optimal conditions have strong diffraction of AlN (0 0 2) and a relatively weak diffraction of AlN (1 0 0), and the full width at half maximum of (0 0 2) peaks of these films falls in the range of 612-648 arcsec. The effect of the anode-layer ion source on the AlN film growth is discussed.
- 出版日期2008-4-21
- 单位武汉大学
