Memristor Behaviors of Highly Oriented Anatase TiO2 Film Sandwiched between Top Pt and Bottom SrRuO3 Electrodes

作者：Yoon In Sung; Choi Jin Sik; Kim Yeon Soo; Hong Sa Hwan; Hwang In Rok; Park Yoon Chang; Kang Sung Oong; Kim Jin Soo; Park Bae Ho^*

来源：Applied Physics Express, 2011, 4(4): 041101.

DOI：10.1143/APEX.4.041101

Bipolar resistive switching behaviors have been observed in Pt/TiO2/SrRuO3 structures whose TiO2 has a highly oriented anatase phase. The resistive switching behaviors reveal a strong dependence on the duration time of the switching pulse, top electrode size, and amplitude of the switching voltage. We have also analyzed the conduction mechanisms of each resistance state in both polarities. All the resistive switching characteristics of our Pt/TiO2/SrRuO3 structures can be explained by memristor behavior based on locally induced ion migration.

• 出版日期2011-4