Annealing effects on luminescence from Ce-implanted alpha-Al2O3

作者：Aono K^*; Toida H; Terashima K; Iwaki M

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2001, 175: 580-584.

DOI：10.1016/S0168-583X(00)00648-0

• ion implantation
• luminescence
• ion beam excitation
• defect states
• Ce-implanted
• sapphire

A study has been made of the luminescence during 100 keV-Ar ion bombardment to Ce-implanted alpha -Al2O3 at room temperature. Cerium ions were implanted into alpha -Al2O3 single crystals at an energy of 100 keV at doses of 5 x 10(13)-1 x 10(16) ions/cm(2). After ion implantation, annealing was carried out at 400 degreesC, 600 degreesC and 1000 degreesC for 1 h in an argon gas atmosphere. Ion beam-induced luminescence was measured using Ar ion beam. The main peaks of the luminescence spectra emitted from Ce-implanted specimens appear near 340, 390 and 420 nn, which are the same wavelength of unimplanted specimen. In the case of as-implanted specimens, the intensity at 340 nm monotonously decreases as the dose increases, but those at 390 and 420 nm are maximum at the dose of 5 x 10(13)-2 x 10(14) ions/cm(2) After annealing, the intensity at 340 nm is lower than or equal to that for an unimplanted specimen. In contrast, the peak intensities at 390 and 420 nm are higher for implanted and annealed specimens than for an unimplanted one. In conclusion, it is found that Ce implantation effects on luminescence appear at 390 and 420 nm.

• 出版日期2001-4
• 单位RIKEN; 华南理工大学