A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material

作者：Schneider Joerg J^*; Hoffmann Rudolf C; Engstler Joerg; Soffke Oliver; Jaegermann Wolfram; Issanin Alexander; Klyszcz Andreas

来源：Advanced Materials, 2008, 20(18): 3383-+.

DOI：10.1002/adma.200800819

A family of single-source precursors for low temperature processing of uniform, transparent, and adherent ZnO thin films on various substrates is studied. They decompose cleanly under very mild processing conditions of 150 degrees C. The resulting ZnO thin films exhibit promising semiconducting properties when printed in a field-effect transistor (FET) device structure. This class of precursor compounds is compatible with existing printing technologies and allows printing of semiconductors on flexible polymer substrates under mild conditions.

• 出版日期2008-9-17