A novel method of electrical characterization of a semiconductor diode at forward bias

作者：Zhu, C Y^*; Wang, C D; Feng, L F; Zhang, G Y; Yu, L S; Shen, J

来源：Solid-State Electronics, 2006, 50(5): 821-825.

DOI：10.1016/j.sse.2006.04.022

• semiconductor diode
• admittance
• forward bias
• negative capacitance
• interfacial layer
• GaN

A novel nondestructive method to characterize a semiconductor diode using admittance-voltage (A-V) measurements at forward bias is presented. For this method, the imaginary and the real part are considered simultaneously to get the accurate parameters of a diode, such as series resistance, junction capacitance, junction voltage and ideality factor at various forward biases. This method can also be used to detect and measure an interfacial layer in a real diode. With this method the n-GaN Schottky diodes with various ohmic contacts were investigated. The measurements confirmed that the giant negative capacitance (NC) of Schottky diodes is an effect of the junction and the interfacial layer can be considered as a layer structure with nonlinear resistance and capacitance.

• 出版日期2006-5
• 单位佛山科学技术学院; 天津大学; 北京大学