Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect

作者：Cho Seongjae^*; Kim Hyungjin; Sun Min Chul; Park Byung Gook; Harris James S Jr

来源：Journal of Semiconductor Technology and Science, 2012, 12(3): 370-376.

DOI：10.5573/JSTS.2012.12.3.370

• Silicon photodetector
• p-i-n structure
• optical interconnect
• device simulation

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f(-3dB) of 80 GHz at an operating voltage of 1 V was obtained.

• 出版日期2012-9