Analysis of the Hardness for Cu/Ag Multilayers with Various Modulation Wavelengths

作者：Cao Ke^*; Ren Fengzhang; Su Juanhua; Zhao Shiyang; Tian Baohong

来源：Rare Metal Materials and Engineering, 2011, 40(12): 2152-2155.

• Cu/Ag multilayers
• Hall-Petch relation
• dislocation pile-up model
• dislocation stability

Cu/Ag multilayers with various modulation wavelengths were deposited on pure Cu substrates by the double-cell electrodeposition process. The relationship between the hardness of multilayers and their modulation wavelengths was studied. The results show that the relationship could be described by the Hall-Petch relation based on dislocation pile-up when the modulation wavelengths are in the regime of 300-600 nm, and the Hall-Petch relation breaks down when the modulation wavelength is below 300 nm. The limit size of the grains with stable dislocations for Cu/Ag multilayers, which is obtained by analyzing experimental results, is about 25 nm. Based on the theory of dislocation stability proposed by Cheng et al., the limit grain size of Ag crystal with stable dislocation is 27 nm. The theoretical value is close to the experimental value. It is better to demonstrate the theory.

• 出版日期2011-12
• 单位河南大学