Memory-State Dependence of Random Telegraph Noise of Ta2O5/TiO2 Stack ReRAM

作者：Terai Masayuki^*; Sakotsubo Yukihiro; Saito Yukihiro; Kotsuji Setsu; Hada Hiromitsu

来源：IEEE Electron Device Letters, 2010, 31(11): 1302-1304.

DOI：10.1109/LED.2010.2068033

• Filament
• noise
• random telegraph noise (RTN)
• resistive random access memory (ReRAM)
• resistive switch
• RRAM
• Ta2O5
• TiO2

Memory-state [low-resistance state (R-L) and high-resistance state (R-H)] dependence of random telegraph noise (RTN) of Ta2O5/TiO2 resistive random access memory is investigated. The conduction mechanism of both memory states and a limit of resistance controllability are also investigated to clarify the difference in the RTN mechanism of both states. The boundary between the R-L and R-H states was found at 5-20 k Omega, and the conduction mechanism much depended on the memory state. The noise also depended on the memory state. The noise amplitude in the R-H state was larger than that in the R-L state. In the R-H state, a tunnel barrier was generated to cut off a conduction path (filament), and traps inside the tunnel barrier were supposed to increase the noise amplitude. Moreover, the composition of the following degraded the noise distribution in the R-H state: 1) capture and emission of charges with traps and 2) instability of these traps against the bias temperature stress.

• 出版日期2010-11