科研之友
微信
新浪微博
Facebook
分享链接
摘要
A Monte Carlo investigation of charge transport-including quantum tunnelling effects-across Schottky barriers ( both n-type and p-type) in the reverse bias regime is presented. The effect of the variation of different quantities ( such as the barrier height or the temperature) over the current density is discussed and extensively analysed. A thorough study of different internal magnitudes such as carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been carried out. In this way, a detailed description of microscopic charge transport in the depletion region associated with the Schottky contact is attained. Results evidence important quasi-ballistic characteristics in the region closer to the contact, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.
- 出版日期2007-9
