An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

作者：He, Jin^*; Liu, Feng; Bian, Wei; Feng, Jie; Zhang, Jian; Zhang, Xing

来源：Semiconductor Science and Technology, 2007, 22(6): 671-677.

DOI：10.1088/0268-1242/22/6/015

• CHARGE

An approximate carrier-based compact model for surrounding-gate MOSFETs with a finite doping body is developed in this paper. Starting from Poisson's equation, the dopant effect is considered approximately by a superposition principle. The analytic surface potential is compared with 3D device simulation and the error is also demonstrated for different body doping. An analytic current - voltage model is derived from the Pao - Sah current equation under the gradual channel approximation and model predictions are verified by the 3D simulation results of the fully depleted SRG MOSFET devices for finite body doping concentration up to 10(17) cm(-3) with accepted error less 10%.

• 出版日期2007-6
• 单位北京大学深圳研究生院; 北京大学