High Transparency and Electrical Conductivity of SnO2:Nb Thin Films Formed through (001)-Oriented SnO:Nb on Glass Substrate

作者：Suzuki Ai Yoshie; Nose Kenji^*; Ueno Ai; Kamiko Masao; Mitsuda Yoshitaka

来源：Applied Physics Express, 2012, 5(1): 011103.

DOI：10.1143/APEX.5.011103

Nb-doped (101)-oriented SnO2 (SnO2:Nb) thin films were fabricated through postdeposition thermal annealing of (001)-oriented Nb-doped SnO films grown on glass substrates using pulsed laser deposition. Nb doping resulted in an anisotropic lattice deformation explained by Nb in Sn site. Resistivity, electron concentration, and mobility values of 3.7 x 10(-3) Omega cm, 6.5 x 10(19) cm(-3), and 26 cm V-1 s(-1), respectively, were achieved in the films at room temperature for a dopant concentration of 1 at.%. The optical band gap increased from 3.9 to 4.1 eV with Nb doping >= 1 at. %.

• 出版日期2012-1