New Layered Intergrowths in the Sn-Mo-Se System

作者：Beekman M^*; Cogburn G; Heideman C; Rouvimov S; Zschack P; Neumann W; Johnson D C

来源：Journal of Electronic Materials, 2012, 41(6): 1476-1480.

DOI：10.1007/s11664-012-1971-3

• Thermoelectric
• intergrowth
• semiconductor
• synthesis
• novel materials
• thin film
• modulated elemental reactants

Several new metastable layered intergrowths based on tin monoselenide and molybdenum diselenide, [(SnSe)(1+) ] [MoSe2] , have been prepared by self-assembly from elemental nanolaminate precursors deposited by physical vapor deposition. The thin-film specimens were characterized by laboratory x-ray reflectivity and diffraction, synchrotron x-ray diffraction, electron probe microanalysis, and scanning transmission electron microscopy techniques, all of which indicate the formation of intergrowths with precise layering and well-defined composition. Analysis of in-plane diffraction originating from the individual components yields a structural misfit of = 0.06 and suggests turbostratic misorientation of the individual layers. In contrast to most known [(MX)(1+) ] [TX2] -type chalcogenide compounds, electrical transport data for the [(SnSe)(1+) ](1)[MoSe2](1) composition are consistent with semiconducting behavior.

• 出版日期2012-6